s m d ty p e t r a n s i s t o r s 1.base 2.collector 3.emitter unit:mm s o t - 8 9 4.500.1 1.800.1 2 . 5 0 0 . 1 4 . 0 0 0 . 1 0.480.1 0.530.1 0 . 8 0 0 . 1 1.50 0.1 0.440.1 3.000.1 0 . 4 0 0 . 1 2 . 6 0 0 . 1 1 2 3 s m d ty p e t r a n s i s t o r s kta 1273 features collec tor pow er dissi pation: p c =500mw collec tor c urre nt: i c =-2a complem entary to ktc3205 absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector to base voltage v cbo -30 v collector to em itt er vo ltage v ceo -30 v em itt er to base voltage v ebo -5 v collector current (dc) i c -2 a collector pow er dissipati on p c 500 m w junct ion tem pera ture t j 150 storage tem pera ture rang e t stg -55 to +150 ele ctric al characteristics t a = 2 5 paramet er sym bol test conditions min typ ma x unit collector-ba se breakdow n voltage v (br)cbo i c =-1ma , i e =0 -30 collector-emit ter breakdow n voltage v (br)ceo i c = -10ma , i b =0 -30 em itt er- base brea kdow n voltage v (br)ebo i e = -1m a, i c =0 -5 collector cutof f c urr ent i cbo v cb = -30 v, i e = 0 a -0.1 a em itt er cutoff c urr ent i ebo v eb = -5v, i c = 0 a -0.1 a dc curre nt gain * h fe v ce = -2v, i c = -500m a 100 320 collector saturation voltage v ce(sat) i c = -1.5a, i b = -30 m a -2 v base t o em itt er vo ltage v be v ce = -2 v, i c = -500m a -1 v transition frequency f t v ce = -2v, i e = 500 m a 120 mh z output c apacitance c ob v ce = -10 v, i e = 0, f = 1.0 mh z 48 pf * puls ed: pw 350 s, duty cycle 2% v v v h fe class ification rank o y range 100 200 160 320 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type diodes smd type transistors smd type ic transistors smd type smd type ic transistors smd type smd type ic transistors smd type smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification 4008-318-123
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